| PART |
Description |
Maker |
| HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
| IS42VM16160K |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| 9605R1.7KL2.0 9610R3.4KL2.0 9615R5.1KL2.0 |
1,000,000 Full Cycles; 5,000,000 Dither Cycles
|
List of Unclassifed Man...
|
| HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 225-0017-000 |
5 polarizations available, Rated 500 mating cycles
|
List of Unclassifed Manufacturers
|
| 23-1 |
Momentary Contact 100,000 Cycles of Operation
|
Grayhill, Inc
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| PV2S640SS |
ELECTRIC LIFE: 200,000 MAKE-AND-BREAK CYCLES
|
E-SWITCH
|
| P13PAB223MAB17 P13PAB224MAB17 P13PAB100KAB17 P13PA |
P13L - Long Life Cermet Potentiometer up to 2 Million Cycles
|
Vishay Sfernice
|
| BG440.2505201 BG440.5005201 BG440 |
EC-motor with planetary gear unit for automatic spindle positioning cycles
|
Baumer IVO GmbH & Co. KG
|
